PERFORMANCE ANALYSIS OF EPITAXIAL SILICON P-N FILMS IN NEXT-GENERATION THERMAL ENERGY CONVERSION DEVICES

Authors

  • F. Arzikulov Assistant of Biomedical Engineering Informatics, Biophysics Department Tashkent Medical Academy, Tashkent Uzbekistan
  • Sh. Kuchkanov Associate Professor of the Department of Alternative Energy Sources (PhD), Tashkent State Technical University named after Islam Karimov, Tashkent Uzbekistan.

Keywords:

Epitaxial silicon, p-n junction, thermal energy conversion, Seebeck effect, thermoelectric devices, electrical conductivity, thermal conductivity, nanostructuring, doping concentration.

Abstract

Epitaxial silicon p-n films have emerged as a critical material in the advancement of thermal energy conversion technologies. These structures offer the potential to convert waste heat into electricity, providing a sustainable energy solution. This article explores the performance analysis of epitaxial silicon p-n films in next-generation thermal energy conversion devices. It examines their thermoelectric properties, fabrication techniques, and challenges in optimizing their efficiency. A focus is placed on their Seebeck coefficient, electrical conductivity, and thermal conductivity. Additionally, this paper discusses the importance of nanostructuring and doping concentration in improving performance. Overall, epitaxial silicon p-n films show promise in enhancing thermal-to-electric energy conversion for applications ranging from industrial waste heat recovery to microelectronics.

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Published

2024-09-27

Issue

Vol. 31 (2024)

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

How to Cite

PERFORMANCE ANALYSIS OF EPITAXIAL SILICON P-N FILMS IN NEXT-GENERATION THERMAL ENERGY CONVERSION DEVICES. (2024). European Journal of Interdisciplinary Research and Development , 31, 39-42. https://ejird.journalspark.org/index.php/ejird/article/view/1192