PERFORMANCE ANALYSIS OF EPITAXIAL SILICON P-N FILMS IN NEXT-GENERATION THERMAL ENERGY CONVERSION DEVICES

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F. Arzikulov
Sh. Kuchkanov

Abstract

Epitaxial silicon p-n films have emerged as a critical material in the advancement of thermal energy conversion technologies. These structures offer the potential to convert waste heat into electricity, providing a sustainable energy solution. This article explores the performance analysis of epitaxial silicon p-n films in next-generation thermal energy conversion devices. It examines their thermoelectric properties, fabrication techniques, and challenges in optimizing their efficiency. A focus is placed on their Seebeck coefficient, electrical conductivity, and thermal conductivity. Additionally, this paper discusses the importance of nanostructuring and doping concentration in improving performance. Overall, epitaxial silicon p-n films show promise in enhancing thermal-to-electric energy conversion for applications ranging from industrial waste heat recovery to microelectronics.

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How to Cite
F. Arzikulov, & Sh. Kuchkanov. (2024). PERFORMANCE ANALYSIS OF EPITAXIAL SILICON P-N FILMS IN NEXT-GENERATION THERMAL ENERGY CONVERSION DEVICES. European Journal of Interdisciplinary Research and Development, 31, 39–42. Retrieved from http://ejird.journalspark.org/index.php/ejird/article/view/1192
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